Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability

The topological insulator 2D Bi2Se3 is promising for electronic devices due to its unique properties; however, it challenging prepare antioxidative nanosheets since prone oxidation. Surface passivation using ligand agents after exfoliation works well protect the surface, but process time-consuming and technically challenging; a agent that stable under highly biased potential significant in situ of surface. In this work, roles halide anions (Cl−, Br−, I−) respect chemical properties synthetic during electrochemical intercalated were investigated determine antioxidation capacity. It was found prepared solution tetrabutylammonium chloride (TBA+ Cl−) have best oxidation resistance via surface bonding Bi with Cl, which promotes obtaining better device stability. This work paves an avenue adjusting components electrolyte further promote stability Bi2Se3-nanosheet-based devices.